微纳米作业4.docxVIP

1. You need to fabricate a silicon device on an n-type wafer having ND = 1015 cm-3 bycreating a p-n junction depth at 0.1 μm. You have access to an ion implanter that youplan to operate at 100 keV. You select B as the implant (because of the damage that Ga might do to your wafer). What B implant dose you will need? Show your calculations and discuss the location of the junction(s). Pay particular attention to the value of Rp relative tothe desired junction depth. Solution：From Figure 8-3 in the book we haveRp= 0.3μmΔRp = 0.087μmCp = CB / Exp( - (xj - R)^2/(2*ΔR^2)) = 10^15 / Exp( - (0.1 – 0.3)^2/(2*0.087^2))= 1.4 *1016cm-3Q= Sqrt(2 *3.14) *Cp* ΔRp= Sqrt(2 *3.14) *1.4 *10^16* 0.087*10^-4= 3.05 * 1011cm-2Since Rp= 0.3μm 0.1μm, there should be a mask.2. You wish to produce a diode using the process described on figure 1. The final cross-section of the device, with relevant dimensions is shown figure 2. Figure 1 Diode ProcessXj = 1 ?m tox = 0.06 ?mFigure 2 Final Cross section of the deviceA process flow for making the device is listed below. Fill in the blanks in the process (Steps 2, 4, and 6). Note that you will start by determining the Dt and dose (Q) needed toproduce the desired doping profile. From that and the final oxide thickness, you will calculate the oxidation/drive-in conditions. For simplicity, assume intrinsic conditions fordiffusion (this is not strictly correct, but is OK for an initial estimate of process parameters). Process Flow Starting Material: p-type (100) silicon wafer, NA = 1015 cm-31.Photolithography to define n-type region. Resist thickness = 1 μm. 2.Ion Implantation of Phosphorous. Energy = 50 keV, Dose = 6.76 * 1012cm-2(Question: Is the resist thick enough to mask this implant?) 1μm 0.07μm, hence the resist is thick enough.3.Strip Resist. 4.RCA Clean. 5.Oxidation to grow 0.06 ?m oxide. Temp = 1000C, Ambient = Dry O2, Time = __47_ min. Use the dry oxidation chart supplied in Problem Set 2 to estimate the time. 6.Anneal to