Si基+ZnO纳米壁网格结构紫外探测器的制备.pdfVIP

Vol. 32,No. 7 JournalofSemiconductors July2011 Fabricationof ZnO nanowall-network ultravioletphotodetectoronSisubstrates Su Shichen(宿世臣) ,YangXiaodong(杨孝东) ,and Hu Candong(胡灿栋) KeyLaboratoryofElectroluminescentDevices,DepartmentofEducationofGuangdongProvince,InstituteofOpto-Electronic Materials and Technology,South China Normal University,Guangzhou510631,China Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics, and Physics, Chinese Academy of Sciences, Changchun 130033, China Abstract: ZnO nanowall networks were prepared by plasma-assisted molecular beam epitaxy without a catalyst onSi(111)substrates.Thenanostructureshavepreferredorientationalongthe axis.Thenanostructuresareabout 10 to 20 nm thick and about 50 nm tall. The planar geometry photoconductive type metal–semiconductor–metal photodetector based on the ZnO nanowall networks exhibits a high and wide response spectrum, and no decrease from250to360nm.Withtheappliedbiasbelow5V,thedarkcurrentwasbelow6 A,andthepeakresponsivity of 15 A/W was achieved at 360 nm. The UV (360 nm) to visible (450 nm) rejection ratio of around two orders couldbeextracted from the spectra response. Keywords: ZnO;detector;MBE DOI: 10.1088/1674-4926/32/7/074008 PACC: 7155;7340L;7335 2. Experiments The growth of the nanowalls was carried out using a 1. Introduction