微波电浆化学气相沉积法于矽基材上成长钻石薄膜-中华科技大学.pdf

Journal of China Institute of Technology Vol.38-2008.6 微波電漿化學氣相沉積法於矽基材上成長鑽石薄膜 Growth of Diamond Films on Silicon Substrate by Microwave Plasma Chemical Vapor Deposition 吳玉祥1 張季雄2 Yu-Shiang Wu Chi-Hsiung Chang 1 中華技術學院機械工程學系暨機電光研究所副教授 2 中華技術學院機電光研究所碩士班研究生 Department of Mechanical Engineering China Institute of Technology 摘 要 鑽石具備有許多優異的性質，如高硬度、高熱傳導率 、耐腐蝕、抗輻射、化 學惰性等性質，可以應用在光電元件、生物科技、機械、航空等領域；而在本研 究中，為了要在 P 型(100)矽基材上沉積鑽石薄膜，使用低溫低壓的方式，利用微 波電漿化學氣相沉積(Microwave plasma chemical vapor deposition ，MPCVD)的方 式，控制其生長環境來進行鍍膜，讓基材在沒有經過預處理與有經過預處理這兩 種環境條件下，來比較樣品之間型態的不同，並且利用光學顯微鏡以及XRD ，對 不同的鍍膜進行進一步的分析，以期能找出最佳的鍍膜參數。 關鍵詞 ：鑽石薄膜，微波電漿化學氣相沉積，P 型矽基材 Abstract Diamond has many unique properties such as the hardest natural material, high thermal conductivity, anti-corrosion, resistant against radiation and chemical inactive reaction. It has wide applications in photoelectric device, bio-technology, mechanics, and aviation engineering. In order to deposit diamond thin film on P type (100) silicon substrate, we use microwave plasma enhanced chemical vapor deposition (MPECVD) to control the deposition environment in low temperature and pressure. In this research, the different condition was investigated for treating the substrate: non-pretreatment and pretreatment. We compare the resulting diamond film deposited under different conditions and analyze them with the optical microscopy and XRD to find the better process parameters. 1 微波電漿化學氣相沉積法於矽基材上成長鑽石薄膜 Keywords : Diamond film, Microwave plasma chemical vapor deposit