Analytical Heat Solutions for IC Interconnects互连的IC分析热解决方案.pptVIP

Project 03 Kuntal Bhattacharyya Analytical Solutions for Heat Flow in IC Interconnects Kuntal Bhattacharyya Project Synopsis Topics Covered Failures in Interconnects Reliability Concepts Interconnect Thermal Profile Hot Spots and Via Effects Thermal Resistance in Interconnects Calculation of Healing Length Static Heat solution in (r,z,fi) plane Failures in Interconnects1,2 Electromigration “Current Crowding” Increase in Joule/Self Heating Increase in the overall line temperature Reliability Measures Electromigration is a temperature dependent effect. Temperature control is necessary. This needs efficient Self Heating. Current density is to be kept low. Ensured by proper Interconnect parameters ( L, R/L, C/L) To achieve reasonable Interconnect lifetime, ITRS standards should be maintained. Interconnect Thermal Profile3,4,5 Assumptions Though ‘k’ is a function of temperature and position, it is assumed to be constant. All four sidewalls are considered to be adiabatic. Heat is exchanged only through the underlying substrate. Interconnect Heat Flow3 Under stated assumptions and steady state conditions, the system of heat equation is k[?2T/?x2+ ?2T/?y2+ ?2T/?z2]+Q* =0 The 1-D equation is ?2T/?x2=-Q*/km The volumetric heat generation rate Q* is a factor of Power generation rate due to RMS current. Heat loss rate between interconnect and substrate. The summarized interconnect heat flow equations: d2 Tline(x)/dx2=?2 Tline(x)- ?2 Tref(x)-? ?2=1/ km [{kox(1+0.88 tox/w)/tmtox}- I2rms ?i ?/ w2tm2] ?= I2rms ?i / w2tm2 km Significance of Tref Substrate Thermal Profile3,5 Using the two boundary conditions T(x=0)= Tref and T(x=L)= Tref the interconnect thermal profile is obtained as T(x)= (?/?2)[1-{sinh?x+sinh? (L-x)}/sinh?L]+ Tref Concept of “VIA” and its importance in heat flow. Heat Profile Incorporating Via Effect6 Healing length LH=[ (kMH tILD/ kILD).(1/s)]0.5 Heat spread factor s=weffective/w Weffective !!!!! Temperature along wire: T(x