微电子加工过程（英文）.ppt

PHOTO – 2 CONTACT CUTS Polysilicon, 3500A 30,000 ? SiO2 EXPOSE i-Line Stepper l = 365 nm NA = 0.52, s = 0.6 Resolution = 0.7 l / NA = ~0.5 μm 20 x 20 mm Field Size Depth of Focus = k2 l/(NA)2 = 0.8 μm ETCH CONTACT CUTS Polysilicon, 3500A 30,000 ? SiO2 STRIP RESIST Branson Asher MODIFIED RCA CLEAN DI water rinse, 5 min. H20 - 50 HF - 1 60 sec. HPM H2O–4500ml HCL-300ml H2O2 – 900ml 75 °C, 10 min. H20 - 50 HF - 1 60 sec APM H2O – 4500ml NH4OH–300ml H2O2 – 900ml 75 °C, 10 min. DI water rinse, 5 min. DI water rinse, 5 min. DI water rinse, 5 min. SPIN/RINSE DRY DEPOSIT METAL CVC 601 Sputter Tool PHOTO - 3 - METAL SSI COAT AND DEVELOP TRACK FOR 6” WAFERS SSI coat and develop track ASML 5500/200 NA = 0.48 to 0.60 variable = 0.35 to 0.85 variable With Variable Kohler, or Variable Annular illumination Resolution = K1 l/NA = ~ 0.35μm for NA=0.6, s =0.85 Depth of Focus = k2 l/(NA)2 = 1.0 μm for NA = 0.6 i-Line Stepper l = 365 nm 22 x 27 mm Field Size ETCH METAL Wet Etch STRIP RESIST Branson Asher SINTER Native Oxide Before Sinter After Sinter Reduce Surface States Reduce Contact Resistance Oxygen Hydrogen, neutral region Silicon Crystal + charge region Silicon DiOxide Interface silicon atom that lost an electron PICTURES TEST R = 1/slope = 106 Gigohms Rhos = 106 50/1800 = 2.94 Gigohms/square TEST R=1/slope; Rhos=R / #sqs; Rho=Rhos x thickness (3500?); Dose=implanter setting R wafer 4 = 106 G ; Rhos = 2.94 Gohm/sq; Rho = 103K ohm-cm; Dose=1E12 cm-2 R wafer 3 = 339 G ; Rhos = 9.42 Gohm/sq; Rho = 330K ohm-cm; Dose = ? R wafer 2 = 943 G ; Rhos = 26.2 Gohm/sq; Rho = 917K ohm-cm; Dose = ? R wafer 1 = 1104 G; Rhos = 30.7 Gohm/sq; Rho = 1075K ohm-cm; Dose = ? SAW WAFER SUMMARY A process has been created. REFERENCES Silicon Processing for the VLSI Era, Volume 1 – Process Technology, 2nd, S. Wolf and R.N. Tauber, Lattice Press. The Science and Engineering of Microelectronic Fabrication, Stephen A. Campbell, Oxford University Press, 1996. HOME