与标准si工艺兼容的集成传感芯片的研究-机械工程专业论文.docx

与标准Si工艺兼容的集成传感芯片的研究关键词：集成传感；集成光电三极管；集成压力传感器万方数据AbstractAbstractWiththerapiddevelopmentofmodemscienceandtechnology，people’Slivingstandardhasbeengreatlyimproved．Sensortechnologyhasbeenpaidmoreandmoreattentions，whichhasagreateffectonourlife．Wimitsadvantagesofhightechnologycontent，goodeconomicbenefitandwidemarketprospect，thesensorhasbeenrecognizedasapromisinghigh-techindustryathomeandabroad．Andtheintegratedsensorisflminiature，integratedandintelligent sensor，whichismadebyintegratedcircuittechnology．Withitsadvantagesofsmallsize，lightweight，highreliability，flexible interfaceandmicropowerconsumption，theintegratedsensoristhedevelopmentdirectionofthesensor．Inrecentyears，allkindsofnewintegratedsensorsareemerging，whicharewidelyused．EuropeandtheUnitedStatesandothercountriesshowaclearlead，andsomeofthedomesticresearchinstitutionshavealSOstartedtodosomeresearch．Butthereisstillabiggapintheproductsensitivity，reliabilityandcost．ThispaperproposestomaketheintegratedphotoelectrictransistorandtheintegratedpressuresensormadeinstandardSiprocess．Herealotofresearchhavebeendoneinthedesign，processing，packagingandtestingofthechipsInthispaper，themainworkareasfollows(1)Theworkingprincipleandperformanceadvantagesofthephotoelectrictransistorare analyzed，anditisintroducedhowtomakeit inthestandardSiprocess(2)Thestructureanalysisandsimulationofthephotoelectrictransistorarecarriedout．Fromtheeconomicpointofview，thephotoelectrictransistorwiththe areaof40x409m2，50×100I．tm2，80×1001am2，lOOxlOOjma2aredevelopedin0．25pmBCDprocessbyCSMC．ThetestresultsshowthatthemaximumresponseCanreach2．02A／W，thecurrentamplificationfactorbetaCanbeabout60andthe矗equencycharacteristicisgood(3)UsingtheMOSFETchannelregionastheequivalentpressuresensitiveresistanceoftheintegratedpressuresensor，thesimulationanalysisiscarriedoutbyCOMSOL．Theresultsshowthatthedesignedpressuresensorhasagoodsensitivity．A万方数据ResearchofIntegratedSensingChipsCompatiblewithStandardSiProcesscombinedregimenofCMOStechnologyandMEMStechnologyasthemanufacturingmethodis