透明氧化物半导体薄膜的制备及其光电特性的研究-材料物理与化学专业论文.docx

半导体。XRD测试结果显示，在ZnO：Ga薄膜的XRD图谱中，只含ZnO(002)的特征衍射峰。(6)ZnO：Ga薄膜的晶粒尺寸大小、载流子迁移率在溅射功率加大 时上升；电阻率和光学透过率在溅射功率增加时候下降。实验结果显示， ZnO：Ga薄膜的光学透过率均大于80％。(7)ZnO：Ga薄膜的晶粒尺寸、载流子迁移率和电阻率随沉积过程 中氩气流量、溅射压强、衬底温度和氧氩比的变化而变化。当氩气流量为60SCCM时，ZnO：Ga薄膜的晶粒尺寸较大，载流子 迁移率较高，而电阻率较低。当氩气流量为80SCCM时，ZnO：Ga薄膜 的光学透过率较高。当溅射压强为0．35Pa时，ZnO：Ga薄膜晶粒尺寸和载流子迁移率较 大，而其电阻率较小。当溅射压强为2Pa时，ZnO：Ga薄膜的光学透过 率较高。当衬底温度为450。C时，ZnO：Ga薄膜晶粒尺寸和载流子迁移率较 大，而其电阻率较小。当衬底温度为350。C时，ZnO：Ga薄膜的光学透过 率较高。当氧氩比为1：1时，ZnO：Ga薄膜晶粒尺寸较小，其光学透过率较大。(8)霍耳效应实验结果显示，本文所制备的NiO：Cu薄膜均呈现为 P型半导体。(9)NiO：Cu薄膜的载流子迁移率、电阻率和光学透射率随沉积过 程中溅射功率、溅射压强、衬底温度和氧氩比的变化而变化。随着溅射功率的增加，NiO：Cu薄膜的电阻率和载流子迁移率逐渐增万方数据大，光学透射率逐渐降低。XRD图谱显示，当衬底温度为350℃时NiO(111)衍射峰较强， 随着衬底温度的增加，NiO(111)衍射峰强度降低。提高衬底温度导致 电阻率和载流子迁移率先增高而后降低。薄膜的光学透过率随衬底温度 的升高而升高。当氧氩比为1：1时，NiO(1 1 1)衍射峰较强；随着氧氩比的升高， NiO薄膜样品的电阻率先减小而后增大，载流子迁移率先增加后减小， 薄膜的光学透过率随氧氩比的升高而升高。(10)在11型ZnO：Ga薄膜上沉积P型NiO：Cu薄膜制成pn结，并 采用霍耳效应装置测量其I．V曲线，显示出典型的pn结的I．V曲线。关键词：磁控溅射ZnO：Ga靶材NiO：Cu靶材ZnO：Ga薄膜 NiO：Cu薄膜pn结I—V曲线光电特性本文为国家自然科学基金(批准号和广西自然科学基金(批准号：2010G1心晒D013036)资助项目III万方数据STUDIES oN PREnU更ATIoN oF TRANSPARENT OⅪDE SEMICONDUCToR FILMS AND THEIR PHoTOELECTRIC PRoPERTIESABSTRACTThe ZnO：Ga and NiO：Cu target materials were prepared by means of the solid state reaction method using ZnO，Ga203，NiO and CuO powders as their raw materials．The influence of different sintering temperatures on the density and the doping ratio of the ZnO：Ga and NiO：Cu ceramic target material was studied．The ZnO：Ga and NiO：Cu transparent semiconducting films with highly C axis preferred orientation were deposited on glass substrates by using radio frequency(RF)magnetron sputtering coating machine，respectively．Themachine ， ● 11e effectsertects ofOt thetlle sputtering power,argon gas flow,sputtering pressure，substrate temperature，argon and oxygen ratio on the microstructure and the photoelectric properties of the ZnO：Ga and NiOCu films were investigated， respectively． Under the optimum film deposition condition，the ZnO：Ga and NiO：Cu multilayer films were deposited on the ITO glass substrate by us