cvd石墨烯制备及其电学性质的分析word格式论文.docxVIP

CVD石墨烯制备及其电学性质的研究摘要理想的单层石墨烯室温下高达15000cm2V?1s?1的电子迁移率，受到了器件制备领域学者的广泛关注。但是，在生长、转移和测试的过程中非理想因素介入，导致所制备的石墨烯实际迁移率与理想值相距甚远。本文通过对生长、转移及掺杂等工艺的优化，使得石墨烯迁移率得到一定提高。本文首先研究了CVD石墨烯的制备。采用双重抛光预处理工艺对Cu衬底的表面状态进行处理，提高了Cu 衬底表面的平整度。同时通过对生长过程中气体组分变化分析，发现随着氢气和甲烷比例增加，石墨烯单晶的形状由边缘很多枝丫的六角雪花状向边缘为直边的六角形过渡。研究表明，衬底表面越平整，石墨烯单晶的边缘越平滑越有利于大面积高质量石墨烯的形成。其次，对PMMA旋涂转速、PMMA浓度、腐蚀液种类、腐蚀液浓度等工艺进行了优化。实验表明，当PMMA浓度为40g/l，三氯化铁浓度为200g/l,旋涂PMMA的转速为2500r时，为最佳转移条件。并通过对转移后石墨烯进行NaOH溶液浸泡处理，使得转移后CVD石墨烯表面残留减少，石墨烯的表面更加干净，同时电学性能得到改善。最后，采用了一种简单有效的石墨烯表面修饰方法，利用抗坏血酸中的羟基提供电子，平衡了生长和转移过程中引入的P型掺杂，部分的还原了石墨烯的本质，使石墨烯的迁移率进一步提高，达到初始值的1.3倍左右，使CVD 石墨烯在FET器件方面的应用更进一步。关键词CVD-石墨烯；生长；转移工艺；NaOH溶液；抗坏血酸Investigation on Fabricationand Electronic Propertiesof GrapheneGrownby CVDAbstractTheidealelectronmobilityofmonolayergrapheneatroomtemperature,upto 15000cm2V?1s?1,attractsextensiveattentionofscholarsintheelementfabrication field.However,theinterventionofnon-idealfactorsduringthegrowth,transferand test,leadstothefardistancebetweentheactualmobilityandidealvalueofthe preparedgraphene.Inthispaper,throughtheoptimizationofthetechnologiessuch as growth, transferand doping, the mobilityofgrapheneis improved tocertain extent.The preparationofCVDgrapheneisfirstlyresearchedinthispaper.The surface stateoftheCusubstrateistreatedthroughdouble-polishingpretreatment,andthus theflatnessofCusubstratesurfaceisimproved.Besides,throughtheanalysisofthe changeofthegascompositionduringgrowth,itisfoundthatalongwiththeincrease oftheproportionofhydrogenandmethane,theshapeofthesinglecrystalof graphenetransitsfromthehexagonalsnowflake withalotofbranchesattheedgesto thehexagonwithstraightedges.Itisresearchedthat,theflatterthesubstratesurface is,thesmoothertheedgesofthesinglecrystalofgrapheneare,whichismore favorable fortheformation oflarge-areahigh-qualitygraphene.Next,thetechnologicalparametersincludingPMMAspin-coatingspeed, PMMAconcentration,typeofcorrosiveliquid,concentration ofcorrosiveliquid,etc.areoptimized.TheexperimentshowsthatwhenPMMAconcentrationis40g/l,ferric trichl