TFT黃光制程讲义.pptVIP

Unipac Confidential Photo Process 技術 TFT-LCD Photo Process Concept Process Flow and Basic Principle Equipment of Photo Area Photo Process Issue :Overlap ; Shot Mura Conclusion Photo Process - Overview Lithography:Pattern Transferring Process Photo Process - Process Flow Process Flow Photo Process-Adhesion Purpose : To Increase the Adhesion of Photoresist Adhesion:HMDS(Hexamethyldisilazane); [(CH3)3Si]2NH Key parameter : Adhesion Method Adhesion Time Temperature Function: Si-O-H----OH2+[(CH3)3Si2NH Si-O-Si-(CH3)3 Photo Process - Process Flow Process Flow Photo Process-Coating Purpose: To form a uniform layer of photoresist Resist : Resin Photoactive compound ( PAC) Solvent Additive Key Parameter: Dispense ( Static/Dynamic) Spin Speed Acceleration Time Temperature Control Humidity Control Exhaust Flow Resist Substrate Chuck Condition Spin Coater Slit and Spin Coater Photo Process - Process Flow Process Flow Photo Process-Exposure Purpose : To convert the photoactive compound to an Alkali-soluble compound Mechanism : Key Parameter Exposure Energy Focus Offset Alignment Offset Proximity Type Mirror-Projector Mirror-Projector Panel Stepper Layout (13.3” 14.1”) Stepper Stepper-Panel Stepper Layout (13.3” 14.1”) Photo Process - Process Flow Process Flow Photo Process-Developer Purpose : To dissolve the exposure area ( for positive -type pesist) Mechanism : Key Parameter: Dispense Method Temperature (Developer) Developer time Developer Concentration Spin Dry Condition Puddle Type Spray Type Photo Equipment-In-Line System Photo Process Issue-Shot Mura Photo Process Issue-Shot Mura Photo Process Issue-Shot Mura * * * (酸鹼中和) Resist Thin Film Substrate A A A A A A B B B B B B C C C C C C D D D D D D Thin Film Resist Substrate Substrate * * * *