inasinxga1审审xsb应变超晶格界面结构和光学性能-inasinxga1 examines the interface structure and optical properties of xsb strained superlattices.docx

哈尔滨工业大学工学博士学位论文 哈尔滨工业大学工学博士学位论文 Abs Abstract - - PAGE VIII - - - III - 界面处像衬度对高分辨像中格点之间面间距的影响。 本文对长远波段红外光电薄膜材料 InAs/InxGa1-xSb 应变超晶格的显微结 构进行了深入分析，并揭示界面结构与制备工艺之间的关系及其物理本质，在 “带隙工程”基础上进一步分析显微结构与光学性能之间的内在关系，为长远 波段红外探测光电薄膜材料达到优异的光学性能奠定基础。 关键词：界面结构；界面类型；超晶格；高分辨透射电子显微镜 Abstract InAs/InxGa1-xSb strained layer superlattices have shown considerable promise as candidates for application in infrared detectors, particularly at wavelengths of 8~14μm. The epitaxial growth of thin film heterostructures inevitably involves the formation of interfaces between layers of different materials. Both physical properties and device performance are crucially dependent on the interface structure and composition. The growth by Molecular beam epitaxy (MBE) enables the realization and control of atomically flat and chemically abrupt heterointerfaces. These are two major contributions to interfacial disorder: interfacial roughness due to the formation of steps and islands, and interfacial intermixing that comprises the changes in composition across the interface. Such interfacial disorder can ultimately impact the electrical and optical device characteristics by affecting transport and scattering mechanisms of carriers local deviations in the band offsets.The quality of interfaces depends on numerous growth parameters, substrate misorientation, properties of buffer layer, growth temperature and strain relaxation. This study was characterized quantify the structural properties of SL, and displayed optical properties by HRXRD, FTIR and PL. The interfacial structure of InAs/InxGa1?xSb superlattices is investigated by high-resolution transmission electron microscopy (HRTEM). We have shown that high-resolution electron microscopy with quantitative image matching can enable the relative orientation of the closely separated atomic species in InAs and InxGa1?xSb to be resolved. We have then used this capability to determine interfacial composition. The shift in the atomic positions associated with th