考虑自热效应的soi mosfet漏电流模型及热阻分析-leakage current model and thermal resistance analysis of soi mosfet considering self-heating effect.docxVIP

AbstractDue to the pursuit of high-speed, high integration and large information storage capacity of integrated circuits, the characteristic size of MOSFET scales down continuously during recent years, with the different structures and different material appeared at the same time. However, the properties of many parameters in the short channel MOSFETs become more observable because of the decrease of the size and the appearance of the special structures, which can be ignored in the large size transistor in fact. And they can significantly affect the performances of the devices.The SOI technology is to add a buried SiO2 layer with the thickness of about 100-400nm in the substrate of bulk MOSFET structure. Due to the buried oxide layer, the parasitic junction capacitance between source/drain and substrate is reduced. This layer can also achieve the complete dielectric isolation for the device, and thus the entire elimination of the latch effect. Furthermore, the integrated circuits in this technology also have the advantage of high integration density, high speed, simple technics, small short channel effect, and especially fitting the low voltage low power circuits, etc. Therefore, SOI will be a very competitive technology in the deep sub-micron and nanoscaled integrated circuits. However, the thermal conductivity of SiO2 is approximately 100 times less than that of silicon which is a barrier to heat flow from the channel and results in serious self-heating effect (SHE) in SOI MOSFET compared with bulk silicon transistor. SHE can significantly affect the reliability of the SOI MOSFET, device and circuit operation and modeling, and extraction of the relevant parameters. When the transconductance and current density increase with MOS transistor scaling down furtherly, SHE becomes more pronounced. Especially for analog circuits, the self-heating effect causes significantly decrease of drain current. In the extreme cases, a negative output conductance can be observed du