注塑弯折要点注意事项.pdf

Product Information Guidelines for Designing Subassemblies Using Hall-Effect Devices By John Sauber and Bradley Smith Allegro MicroSystems, Inc. Introduction Stress-Sensitive Locations The Hall effect, discovered by E. H. Hall in 1879, is the There are several locations on a package which are vulnera- basis for all Hall-effect devices. When this physical effect ble to stress, as shown in figure 1. Regardless of the method is combined with modern integrated circuit (IC) technol- used for building a subassembly, it is important to minimize ogy, many useful magnetic sensing products are possible. the stress in these areas. The Hall element, when properly biased, produces an output voltage that is proportional to a magnetic field. This small Failure Modes voltage is processed through a high-quality amplifier, which produces an analog signal that is proportional to the applied The locations shown in figure 1 are associated with the fol- flux density. In Allegro® Hall-effect devices, the signal is lowing failure modes: conditioned and optimized for various types of magnetic inputs to produce a suitable electrical output. (A) Forces over the die face can cause cracking of the die. The die may fail immediately, or it may have a crack which Hall-effect elements respond to stress by modifying the is a latent defect. See the Design Validation Tes