冶金法太阳能级多晶硅提纯技术现状与质量分析 Status quo of Metallurgical Purified Solar Grade Poly-Silicon and its Quality Analysis（史珺）.ppt

Status quo of Metallurgical Purified Solar Grade Poly-Silicon and its Quality Analysis 冶金法太阳能级多晶硅提纯技术现状与质量分析Bradley Shi史珺 上海普罗新能源有限公司 ProPower Inc. 目 录 Brief Introduction of Metallurgical Purification of SOG 冶金法简介 Evolution of Metallurgical Purification of SOG 冶金法的进展 Impurities and its affect to the SOG 太阳能级多晶硅的杂质及其对材料性能的影响 Quality Stability Analysis of Metallurgical Purified SOG 冶金法多晶硅的质量稳定性分析 Technology for Poly-Crystallin Silicon Production多晶硅提纯技术分类 Chemical Routine 化学法 Chemical changes happen to Si in purification process提纯过程中硅发生反应 Physical Routine（Metallurgical Routine ) 物理法(冶金法） No chemical change happens to Si in purification process 提纯过程中硅不发生反应 Chemical Routine 化学法 Chemical changes happen to Si in purification process 硅发生了化学反应 Siemens Routine 西门子法 Modified Siemens Routine 改良西门子法 Mainstream Routine at present 目前的主流工艺 Regular Purity is 9N 常规纯度应可达到9N 多晶硅纯度的表示 Substract the content of P,B,and Metals from 100% 用100%扣除磷、硼、金属杂质后的硅的纯度 C,O,N is about 1~10ppm（无需扣除） 含有大约1~10ppm级的碳、氧、氮等元素 e.g., 7N poly silicon, may contain: B: 20ppb, P: 50ppb, metals: 10ppb; and C: 1ppm, O: 5ppm, N : 1ppm （绝对的硅纯度实际为5N） But content of C,O,N could not exceed the limit 但C、O、N不能过大。 太阳能所需要的多晶硅纯度 Poly silicon with purity higher than 7N could not be made into solar cell directly 7N以上的多晶硅无法用来直接作太阳能电池 B or P must be mixed as dopant 须掺入硼或磷 The dopant of B must be about 0.25ppm 对太阳能来说，硼的掺杂浓度大约在0.25ppmw i.e., for solar cell, the purity must down to 6N even using a 11N poly-silicon 也就是说，在生产太阳能电池时，即便采用11N的高纯硅，也必须掺杂降到6N左右。 Impurities and Solar efficiency杂质对光电转换效率的影响 Demand of New Technology新工艺的需求 Because impurities must added to high pure poly-silicon from Siemens method, which means energy double waste采用西门子法得出高纯度的硅后，又要掺杂到6N的纯度，意味着能源的双重浪费 That’s why the technology of purifying silicon directly to 6N is being explored all the time 直接生产6N太阳能多晶硅的工艺开始被人们所探索。 Metallurgical Routine to purify the poly silicon is the most promising routine