Single Photon Detectors单光子探测器.pptVIP

Single Photon Detectors By: Kobi Cohen Quantum Optics Seminar 25/11/09 Outline A brief review of semiconductors P-type, N-type Excitations Photodiode Avalanche photodiode Geiger Mode Silicon Photomultipliers (SiPM) Photomultiplier Superconducting Wire Characterization of single photon sources HBT Experiment Second order correlation function Semiconductors Semiconductors electrons and “holes”: negative and positive charge carries Energy-momentum relation of free particles, with different effective mass Semiconductors Thermal excitations make the electrons “jump” to higher energy levels, according to Fermi-Dirac distribution: Semiconductors Excitations can also occur by the absorption of a photon, which makes semiconductors suitable for light detection: Intrinsic Semiconductors Charge carriers concentration in a semiconductor without impurities: N-type Semiconductor Some impurity atoms (donors) with more valence electrons are introduced into the crystal: P-type Semiconductor Some impurity atoms (acceptors) with less valence electrons are introduced into the crystal: The P-N Junction Electrons and holes diffuse to area of lower concentration Electric field is built up in the depletion layer Drift of minority carriers Capacitance Biased P-N junction When connected to a voltage source, the i-V curve of a P-N junction is given by: The P-N photodiode Electrons and holes generated in the depletion area due to photon absorption are drifted outwards by the electric field The P-N photodiode The i-V curve in the reverse-biased P-N junction is changed by the photocurrent The P-I-N junction Larger depletion layer allows improved efficiency Smaller junction capacitance means fast response Detectors: Quantum Efficiency The probability that a single photon incident on the detector generates a signal Detectors: Quantum Efficiency Wavelength dependence of α: Summary: P-N photodiode Simple and cheap solid state device No internal gain, linear response Noise (“dark” current) is at th