tio2压敏电阻材料的ceo2,v2o5掺杂及微波烧结研究-study on ceo _ 2, v _ 2o _ 5 doping and microwave sintering of tio _ 2 varistor materials.docx

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2018-06-28 发布于上海
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tio2压敏电阻材料的ceo2,v2o5掺杂及微波烧结研究-study on ceo _ 2, v _ 2o _ 5 doping and microwave sintering of tio _ 2 varistor materials.docx

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tio2压敏电阻材料的ceo2,v2o5掺杂及微波烧结研究-study on ceo _ 2, v _ 2o _ 5 doping and microwave sintering of tio _ 2 varistor materials

关键词：二氧化钛压敏电阻；微波烧结；铈掺杂；钒掺杂；相对介电常数AbstractTitle:THESTUDYOFTiO2BASEDVARISTORCERAMICSDOPED（CeO2，V2O5）BYMICROWAVESINTERINGMajor:MaterialScienceName:WangChenSignature：Supervisor:Prof.ZhaoJingzhongSignature：AbstractTiO2basedvaristorceramicshavesomestrongpointssuchasthebreakdownvoltageislow,thenonlinearcoefficientandelectricalpermittivityarehigh,theprocessofpreparationissimple,thecostislittleandotherwise.Theycanbewidelyusedinelectroniccircuitsofcomputers,micro-motorsandsoonastransienthigh-voltageprotectors,noiseabsorptorsandsurgearrestors.SotheTiO2basedvaristorceramicshaveagreatpotentialapplicationinmarket.Butwiththedevelopmentoftheelectroniccircuits,thebreakdownvoltageofthematerialsneedstobelower,thenonlinearcoefficientneedstobehigherandthedielectriclossshouldbereduced.Microwavesinteringhasanumberofadvantagesuchasheatingspeed,shortsinteringtime,safetyandenergyconservation.Anditcanimprovetheorganizationofthematerials.ItisexpectedtoimprovethecomprehensiveperformanceofTiO2basedvaristorsbyusingmicrowavesineringtosinterthem.Inthispaper,theTiO2basedvaristorceramicswithvariousoxideadditiveswereproducedbybothconventionalsintering(CS)andmicrowavesintering(MS).ThevolumeconcentrationwasmeasuredbyArchimedesmethod,thevaristorpropertiesweremeasuredbythevaristorDCparameterinstrument,thedielectricpropertiesweremeasuredbytheautomaticcomponentanalyzer.Theeffectofsinteringprocessing,sinteringtemperatureanddopantsonsampleswasinvestigated.Andthemicroscopicmorphologyalsowasseenbythescanningelectronmicroscope.Themainresultsareasfollows:Comparedwiththeconventionalsintering,microwavesinteringcanreducethesinteringtemperatureabout200℃,shortentheholdingtimeto1/8oftheconventionalsintering.Andbymicrowavesintering,thedensityofthesampleswasimproved,thebreakdownvoltagewasIIIreduced,thedielectricconstantwasimproved.ThedopingofCe4+canbefavorablefortheformationofgrainboundarybarrier.Comparedwithconventionalsinteringat1400℃for240min,thesamplessinteredbymicrowavesinteringat1200℃for30minhavebetterpropertieswhen