磁控溅射制备氮化铜薄膜及其掺杂分析-preparation and doping analysis of copper nitride films by magnetron sputtering.docxVIP

PAGE PAGE VI南京邮电大学硕士研究生学位论文 AbstractAbstractCopper nitride thin film (Cu3N) is a metastable semiconducting material，which is formed through the covalent bonding between Cu and N atoms. With the low decomposition temperature,high resistivity and reflectance of infrared and visible band, Cu3N has been attracting considerable attention as a new material applicable in optical storage and microelectronics. Moreover, Cu3N is also an excellent host structure since it has the cubic anti-ReO3 structure in which Cu atoms do not occupy the body center of the cubic unit cell, such that an additional atom can be inserted into the body center. This will cause remarkable changes in optical and electrical properties of this material.In this paper, Cu3N films were deposited by reactive DC magnetron sputtering at various N2-gas flow rates, Cu3NixN films were prepared by co-sputtering of Ni and Cu targets. The films were characterized by XRD, EDS, SEM, UV-VIS, Profilometer, Four-probe and Microhardness Tester. From the experimental values, we studied the effects of doping Ni and N2-gas flow rates on the structure and properties of Cu3N films, the conclusions which have been made are as follows:The N2-gas flow rate affects the crystal structure and the preferred orientation of Cu3N films. The deposited films prefer to being (111)-oriented at low N2-gas flow rate but (100)-oriented at high one. The deposition rate of the films got a maximum when the N2-gas flow rate was 15sccm. With the increasing of N2-gas flow rate, the resistivity increased and then decreased, the microhardness was also affected. The optimum N2-gas flow rate for producing high-quality andwell-oriented Cu3N films are 5～10sccm in this system.The addition of Ni to Cu3N films does not modify the film crystal structure and the preferred orientation, but the intensity of diffraction peak (111) reduced, and the position shifted a little angle with the contents of Ni to Cu3N films increased, as also as the larger of the la