RU4099R 深圳鼎尚微电子有限公司 知名集成电路IC供应商.pdfVIP

RU4099 N-Channel Advanced Power MOSFET Features Pin Description ·40V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated TO-220 TO-220F ·Reliable and Rugged ·Lead Free and Green Devices Available Applications TO-263 TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 V VGSS Gate-Source Voltage ±25 TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current TC=25°C 200 A Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested TC=25°C 800 TC=25°C A 200 ID Continue Drain Current TC=100°C 140