Demonstrationofp-type3C–SiC.PDF

Demonstration of p-type 3C-SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C Author Wang, Li, Dimitrijev, Sima, Han, Jisheng, Tanner, Philip, Iacopi, Alan, Hold, Leonie Published 2011 Journal Title Journal of Crystal Growth DOI /10.1016/j.jcrysgro.2011.06.041 Downloaded from /10072/41014 Griffith Research Online .au Demonstration of p -type 3C–SiC grown on 150 mm Si(100) substrates by atomic-layer epitaxy at 1000oC * Li Wang , Sima Dimitrijev, Jisheng Han, Philip Tanner, Alan Iacopi, and Leonie Hold Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Qld, 4111, Australia The potential for enhancement of Si-based devices by growth of SiC films on large- diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C–SiC epilayers on 150 mm Si(100) substrates by atomic-layer epitaxy at 1000 oC using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.8 × 1019 to 2.1 × 1020 cm-3, proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. A doping mechanism, based on the supply sequence of precursors and reactor pressure, is proposed. Keywords: A1. Crystal morphology, A1. X-ray diffraction, A3. Chemical vapor deposition processes, B1. Silicon carbide, B2. Semiconducting materials. * Corresponding author: Li Wang Postal address: Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, 1 Australia Telephone: +61-7 Fax: +61-7 El