工艺参数对离子束溅射ZnOBAl薄膜结构与性能的影响-本原扫描探针.PDFVIP

第30卷 第 5期 真 空 科 学 与 技 术 学 报 2010 年9、10 月 CHINESE JOURNALOFVACUUMSCIENCE ANDTECHNOLOGY 529 工艺参数对离子束溅射ZnOBAl 薄膜结构与性能的影响 * 梁广兴 范 平 张东平 蔡兴民 郑壮豪 (深圳大学物理科学与技术学院薄膜物理与应用研究所 深圳 518060) Structural andPropertyCharacterizationof ZnOBAl FilmsGrownbyIonBeam Sputtering n * c LiangGuangxing,FanPing ,Zhang Dongping,CaiXingmin,ZhengZhuanghao (Institute of ThinFilmPhysicsandApplication,Collegeof . PhysicalScienceandTechnology,Shenzhen University,Shenzhen 518060,China) Abstract TheZnOBAl (AZO) filmsweredepositedbyion beamsputteringoftheceramictargetofZnOdopedwith m 2%(wt.) Al O onBK7glasssubstrates.Theimpactsofthe depositionconditionsonthefilmgrowthwere experimentally 2 3 studied.The microstructures and properties of theAZO filmswere characterizedwith X2ray diffraction, atomic force mi2 o croscopyand conventional surface probes.The results show that the plasma power,substrate temperature and filmthick2 nessaffect theAZOgrowth to avaryingdegree.For instance, asthe thickness increases,the Zn(002) peak goeshigher, c coincidingwith growthofZnOgrains,surface rougheninganddefectsformation.TheoptimizedAZOfilmgrowth conditions . are foundtobe:a plasma powerof113keV, asubstratetemperature of 200 e anda thicknessof 420nm. Keywords AZO thin films,Ion beamsputteringdeposition,Microstructure