多场耦合下定向凝固法制备多晶硅的数值模拟-机械设计及理论专业论文.docxVIP

PAGE PAGE III ABSTRACT the magnetic field coil magnetic and center surface in the silicon melt, the largest velocity decrease from 70 μm/s to 41 μm/s in the silicon melt by more than 41.43%. When the magnetic field coil’s distance remain below 60 mm in the center surface of the silicon melt and magnetic field intensity increases from 0T to 0.8T gradually, the axial temperature gradient in the silicon melt drop largely for 15 k/cm. The changing rule of the flow field in the three periods (early, middle and late) of the polysilicon crystal phases was revealed under the action of multi physics fields through the establishment of two-dimensional axisymmetric transient model. When the magnetic field vary from 0T to 1T in polysilicon crystalline phase, the peak values of velocity decreased from 51.644 μm/s in the crystallization of the early to 21.074 μm/s in the crystallization of the late and average flow velocity is reduced 42.11%, 58.59% and 42.11% in the three periods of polysilicon crystalline under multi field coupling respectively. The above simulation results show that the numerical simulation technology is very important theoretical guiding significance to the manufacturing of polysilicon in the future. Key Words: polysilicon; directional solidification;multiple field; magnetic field; numerical simulation 目 目 录 PAGE PAGE IV 目 录 第 1 章 绪论 1 1.1 引言 1 1.2 数值模拟技术在硅晶体生长中的的研究进展 1 1.3 磁场作用下晶体生长的国内外现状 3 1.4 本课题来源、研究的目的及主要内容 7 1.4.1 本课题来源 7 1.4.2 主要研究目的 7 1.4.3 主要研究内容 7 1.5 本章小结 9 第 2 章 多晶硅定向凝固生长基本理论及多物理场系统 10 2.1 多晶硅定向凝固技术概述 10 2.1.1 传统的定向凝固技术 10 2.1.2 新型的定向凝固技术 13 2.2 定向凝固原理 15 2.3 定向凝固法制备多晶硅工艺参数 16 2.3.1 平衡分凝系数 16 2.3.2 温度梯度 18 2.3.3 凝固速率 19 2.3.4 G/R 值 21 2.4 定向凝固特性 22 2.4.1 晶粒形态 22 2.4.2 固液界面形态 23 2.5 多物理场耦合系统 25 2.5.1 热场模式 25 2.5.2 流场模式 27 2.5.3 磁场模式 28 2.6 本章小结 29 PAGE PAGE VI 第 3 章 多晶硅定向凝固数值模拟方法 31 3.1 物理模型 31 3.2 数学模型 32 3.2.1 控制方程 32 3.2.2 边界条件 35 3.3 常见的数值求解方法 36 3.3.1 有限差分法 36 3.3.2 有限单元法 37 3.3.3 有限体积法 37 3.4 数