相变化记忆体HSPICE模型.PDFVIP

國立宜蘭大學工程學刊(2007) 第三期第 109～124 頁 相變化記憶體 HSPICE模型 陳衍凱 1 廖翊博 1 江孟學 2 1. 國立宜蘭大學電子工程研究所研究生 2. 國立宜蘭大學電子工程學系副教授 摘 要 此論文是把相變化記憶體的特性，利用 HSPICE 軟體建立模型；相變化記憶體是 Ge Sb Te 2 2 5 所構成，由輸入電流脈波高低，會在結晶與非結晶兩種狀態之間做轉換，利用這特性做資料儲 存；此模型將化合物特性利用電路方法清楚呈現，也很直接快速方便放在模組電路上模擬出結 果。用輸入電流脈波的不同，分別高電阻或是低電阻兩種不同的狀態表現非結晶與結晶，若輸 入電流脈波未達到轉換狀態的條件時，則模型會保持上一次被寫入的狀態，因此可幫助在電路 模擬時，可做連續的讀寫測試。模型的被改變的寫入條件可由使用者自行定義，擁有更佳的可 塑性。 關鍵詞：相變化記憶體、HSPICE 、結晶、非結晶 - 109 - 國立宜蘭大學工程學刊(2007) HSPICE Model for Phase Change Memory Elements Yan-Kai Chen1 Yi-Bo Liao1 Meng-Hsueh Chiang2 1. Student, Department of Electronic Engineering, National Ilan University 2. Associate Professor, Department of Electronic Engineering, National Ilan University Abstract In this paper, we present a two-terminal HSPICE model which predicts the Phase Change Memory property. There are two different states: crystalline and amorphous in Phase Change Memory set by different input current pulses. Resistance of the model also has two different levels: low-resistance and high-resistance determined by the two different states. If the input current pulse does not reach the programming current pulse width or amplitude, the model keeps the state unchanged. Such feature enables the more realistic condition of serial write and read current pulses in circuit simulation. With the programming conditions (current pulse width, amplitude, etc.) defined by users, the model is very convenient and useful for IC CAD. Keywords :Phase Change Memo