磁控溅射制作ZnO薄膜及其气敏特性研究-微电子学与固体电子学专业论文.docx

I万方数据 I 万方数据 华 华 中 科 技 大 学 硕 士 学 位 论 文 Abstract ZnO Gas sensors have already gained wide applications with a sum of advantages: high sensitivity, long life, good stability, corrosion resistance, simple structure and low cost. With the continuous development of gas sensors market demand, better performance of ZnO thin film is needed. In this paper, the Parameter of RF sputtering is changed to improve the gas sensing performance of ZnO thin film. The main contents of this Paper as follows: Consider of factors influence the property of ZnO thin film, we have changed the power and press condition of RF sputtering to fabricate ZnO thin films. The study found that in a certain range with the press, the crystallization of ZnO increased when press decreased, but too small pressure will lead to lattice defects. With the increase of sputtering power, the average grain size of the film increased, and the crystal quality improved. This is because of the sputtered atoms have enough energy move to the right place,which in favor of a complete lattice structure. But further enhance of the sputtering power will lead the c -axis of film deteriorated. The annealing conditions also influence the crystal orientation. In a certain range, the higher temperature the more ZnO c-axis orientation. But when the annealing temperature too high, the lattice structure will be changed. With the H2S gas sensing performance of the ZnO thin films, the thickness and test temperature have a great impact on the H2S sensitive properties of the films. After comparing the different factors which impact the H2S gas sensitive of ZnO thin films, and combined with the test result of SEM and XRD, we have found that the ZnO films fabricated with the Parameter of 100W,1.2Pa and 40min sputtering time annealed at 700 ℃ for 1 hour has the best H2S gas sensitive properties. The sensitivity up to 450 when the H2S concentration is 150ppm. Key words: ZnO RF Sputtering H2S Thin films Gas sensing II万方数据 II 万方数据 华