高k栅介质硅MOS器件栅极漏电流模型及制备工艺研究-微电子学与固体电子学专业论文.docxVIP

华中科技大学硕士 学位论 华 中 科 技 大 学 硕 士 学 位 论 文 II II Abstract With aggressive reduction of characteristic length of MOSFET，Si MOS device structural parameters approach to their physical limitation gradually which leads to a larger gate leakage current. High-k gate dielectric material replacement of SiO2 as gate dielectric is a promising method to decrease gate leakage current and scale down the feature dimension of MOSFET. However, when the physical thickness of gate dielectric is close to the channel length, the influence of fringing field effect on the MOS electrical characteristics become more and more severe. Theoritically a direct tunneling current model of nano-MOSFET with high-k gate dielectric is developed by considering the above effects. Experimentally preparation of HfTaON gate dielectric and influence of stack gate on electrical characteristics of MOS devices are investigated. A fringing capacitance model of MOSFET with high-k dielectric is built. The analytical distribution of surface potential of high-k gate dielectric is derived. It is found that a low-k sidewall spacer should be used to alleviate the fringing-field effect. The tunneling current increases exponentially as the oxide thickness is scaled down. Comparison of simulation results with experiment data verifies the validity and extensive applicability of this model. It is found that plasma nitrided sample exhibits good electrical properties: lower interface-state density, lower gate leakage current and higher reliability. The Hf-Al-O is likely to form a metastable entropystabilized structure by incorporate Al. It is found that the HfTaON/AlON stack dielectric is a promising technology for preparing high-k gate-dielectric MOS devices with excellent electrical performances by comparing HfTaON/TaON、HfTaON/AlON、HfTaON/HfON、HfTaO/AlON stack dielectrics. Keywords：MOSFET High-k gate dielectric direct tunneling current HfTaON PAGE IV PAGE IV 目 录 摘要 I HYPERLINK \l _bookmark0 Abstract II HYPE