大工CMOS数字集成电路总复习.pptVIP

* Starting at the bottom of the design abstraction chart Gate Oxide – insulator NMOS – since carriers are electrons (n type carriers) M – metal; O – oxide; S – semiconductor Field oxide isolates one device from neighboring devices Base technology for the semester 0.25 micron transistor length L (drawn separation from source to drain) – 0.24 effective 1.0 micron transistor width W for minimum size transistor 2.5V supply voltage VDD 0.43 (-0.4) threshold voltage for NMOS (PMOS) devices so min W/L ratio in max for 250nm technology is 1/.24 View transistor as a switch with an infinite off-r