fes2薄膜的电沉积制备与光电性能研究材料工程专业论文.docxVIP

北京化T大学硕士学位论文膜呈纯净的黄铁矿FeS2晶型。以FeSOa为铁源硫化得到的薄膜为P 北京化T大学硕士学位论文 膜呈纯净的黄铁矿FeS2晶型。以FeSOa为铁源硫化得到的薄膜为P 型半导体，禁带宽度为0．95eV，载流子浓度为3．922x 1017cm一，载流 子迁移率为8．236cm2．V-1．s，电阻率为0．1060 Ohm·cm，可认为性能良 好，适合用于制备太阳能电池。以(ⅫH4)2 Fe(SO。)2为铁源硫化得到的 薄膜同样也是P型半导体，禁带宽度为0．97eV，载流子浓度为 2．082x1017cm一，载流子迁移率为7．716cm2·V-1S，电阻率为0．3885 Ohm．cm，可认为性能良好，同样适合用于制备太阳能电池。 关键词：电化学沉积，FeS2， 硫化退火，太阳能电池，光电性能 II 万方数据 ABSTRACTELECTRODEPOSITING ABSTRACT ELECTRODEPOSITING PREPARATION AND PHOTOELECTRICAL PROPERTIES oF PYRITE THIN FILM ABSTRACT FeS2 which is pyrite has an appropriate forbidden band gap (毽=0．95eV)and high absorption coefficient(1 0’cm叫)，it is a extremely potential solar battery material for absorption material．It has received extensive attention of the photovoltaic industry since it consists of nontoxic and abundant elements．At present，FeS2 thin film general prepared by expensive methods such as vapor deposition．But the result films prepared by electrodeposition which is much cheaper always deviation from ideal stoichimetry．In this paper,the precursive Fe—S films were prepared by electrodepositing．The pyrite crystal FeS2 thin film were expected to obtain by annealing the precursive Fe—S films in sulfurizing atmosphere． First，a electrodeposition of precursive Fe-S films process was investigated．A constant potential process was used to explore the effect of component concentration，solution pH，potential and deposition time． The electrodeposition solution was composed with FeS04 or(NI-14)2 Fe(S04)2 as the source of Fe element，and Na2S203 as the Souce of S element．When FeS04 as the source of Fe element，the amorphous precursive Fe—S films with S：Fe=I．25：1 can be achieved using the condition of 0．0 1 M FeS04 with 0．02M Na2S203；pH=4．0；deposition potential of。1．00V(vs．scE)；deposition time of 900s．When(NH4)2 Fe(S04)2 as the source of Fe element，the amorphous precursive Fe。S films with S：Fe=I．29：l can be achieved using the condition of 0．0 1 M (NH4)2 Fe(S04)2 with 0．02M Na2S203；pH=3．8；deposition potential of 一0．90V(vs