ctm器件俘获层存储特性及界面性质研究微电子学与固体电子学专业论文.docxVIP

AbsIractAbstract AbsIract Abstract The rapid development of the information age makes the increasing popularity of electronic products，which activates huge memory products market and promotes the ceaseless innovation in semiconductor technology．Semiconductor technology node continues to be moved forward．However，the development of traditional Flash memory encounters obstacles with the technology nodes moving forward．Continuing to scale down the conventional memory Can not guarantee the proper storage of information，SO the development of the next generation of memory is imperative．The charge trapping memory(CTM)Was created based the traditional Flash memory．It can avoid the trapped charge to loss to nothing at time due to the discrete charge storage insulated between traps and also Can be scaled down required．So it has been widely studied． At present，the development of CTM device structure is relatively mature，SO most of the researches are focused the materials．In this work，TANOS (TaN／Ah03／Si3NdSi02／Si)structure were used to study some properties of the CTM device，where TaN denotes gate electrode，A1203 the barrier layer，Si3N4 the charge trapping layer,Si02 the tunneling layer，Si the substrate．In this work，based on the first—principles methods and the VASP software，we studied the intrinsic defects inside Si3N4 materials and some properties of A1203／Si3N4 interface．This work consists of five parts．Every part is summarized as follows： The first part is an introduction,we firstly made brief introduction for the history way of recording information as to lead to the information storage and memory technology．Then we stated the reason to develop the CTM device and introduced the current state of t_he development for CTM． The second part is an overview of CTM and description of study methods used in this work．In this part，the structure evolution and operation mechanism of CTM was narrated clearly,then the materials used to form the device were analyzed and selected．Finally