等离子体刻蚀的多目标优化设计研究计算力学专业论文.docxVIP

等离子体刻蚀的多目标优化设计研究关键词：等离子体刻蚀；代理模型；优化设计；刻蚀速率；横向刻蚀；元胞法 等离子体刻蚀的多目标优化设计研究 关键词：等离子体刻蚀；代理模型；优化设计；刻蚀速率；横向刻蚀；元胞法 万方数据 Research Research on multi-objective optimization design ofplasma etching Abstract In the process of chip preparation technology,the application of plasma etching technology to generate demand pattern is one of the most important process．Using experimental means to gain experience is time—consuming and costly，and it strongly rely on the experience of the experimenters．In order to overcome these shortcomings，it is very necessary to apply numerical method to simulate the plasma etching process．Besides，in order to reduce the blindness brought by simple measuring method,based on the numerical simulation,to optimize the evaluation index of the plasma etching morphology has a certain practical significance．In this paper，the process of mixed gas C4F8／AR etching Si02 is numerically simulated by using CFD software．Process parameters in the macro chamber include RF power，chamber pressure，gas ratio and plate voltage．And structural parameters of micro devices includes the thickness of photoresist，photoresist angle and slot width．The sensitivity of process parameters in the lllacro chamber and structural parameters of micro devices to evaluation index of etching results，including etch rate and tlansv盯se etching width， is studied．The study find that the effects of various parameters 012 the etching rate is in conformity诵也the physical and chemical mechanism of the plasma etching technology,and the effects of each parameter on the etching rate and the lateral etching width is different， even opposite．111e macroscopic and microscopic parameters，including plate voltage， chamber pressure，photoresist angle and notch width，sensitive to etching rate and lateral etching width are chosen as design variables in this paper．And multi-objective optimization is conducted on etching rate and lateral etching width on micro scales and macro-micro scales． By applying full factorial