钙钛矿型锰氧化物异质结界面遂穿电流的研究物理专业论文.docxVIP

AbstractManganite-based Abstract Manganite-based p-n junctions not only have the rectifying property of traditional semiconductor,also show the transport properties regulated by the temperature and external magnetic field,which is believed to be the ideal materials instead of the traditional semiconductor．However,limited by the properties of manganese oxide，the rate of electron transfer of manganite—based P—n junctions is low, which makes the response speed is too slow to be the electronic components．To improve the tunneling transport can effectively solve the problem． This paper reports the effect of charge ordering and buffer layer on the manganite P—n heterojunction iIl the tunneling current．the main contents are as follows： i) Using the traditional solid-state method to fne target and the pulsed laser deposition technique to grow the manganite—based heterojunction samples． ii)the samples were characterized by X-ray diffraction(XRD)，the diffraction analysis showed that samples of epitaxial growth． iii) Studied effect of charge order transiton on tunneling resistance in La0．67Ca0．33Mn03]LaAl03／0．05-wt％Nb SrTi03 heterojunction and found that the tunneling effect is conducive to the electronic charge ordering． iv) Analyzed nano L副U03 buffer layer-assisted tunneling current i11 manganite P—n heterojunction,and found the buffer layer makes the depletion layer thinner． Key words：manganite p-n heterojunctoin；tunneling current；charge order；buffer layer． Ⅱ 万方数据 目录摘要 目录 摘要 I Abstract．． ． ．． ． ． ． ．． ． ． ．． ． ．． ．． ． ． ． ．． ． ． ．．II 第1章绪论 一l 1．1引言 ．．1 1．2锰氧化物的晶体结构和电子结构 。1 1．2．1晶体结构 1 1．2．2电子结构 3 1．3锰氧化物的一些性质 一4 1．3．1庞磁电阻效应 4 1．3．2电荷有序 。 ．． 4 1．3．3电输运性质 6 1．3．4磁有序 7 1．4锰氧化物的理论模型 ．．8 1．4．1双交换作用 ．8 1．4．2极化子模型 9 1．4．3相分离理论 9 1．5锰氧化物异质结的研究 12 1．6论文选题思路及主要内容 1 3 第2章样品制备及测量 ．： ．．15 2．1样品制备 ．．15 2．1．1靶材制备 ．．15 2．1．2脉冲激光沉积(Pulsed Laser Deposition，PLD)技术及薄膜制备 ． ．． ．． ． ． ． ． ． ． ．． ． ． ． ． ．． ． ． ． ． ． ．． ．．．．11； 2．2样品测量 17 2．2．1物相分析 17 2．2．2电性能测量 ．1 8 第