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33 5 Vol.33 No.5
2014 5 ELECTRONIC COMPONENTS AND MATERIALS May 2014
WO H S
3 2
1 2 3 1 1
WO3
WO H S H S
3 2 2
WO H S
3 2
WO H S H S
3 2 2
H S WO
2 3
doi: 10.3969/j.issn.1001-2028.2014.05.013
TN304.9 A 100105-0053-04
H S gas sensitivity of UV light activated WO gas sensors
2 3
1 2 3 1 1
YU Hualiang , LI Jingling , WU Yichun , LI Yuliang , ZHOU Yingwu
(1. Department of Physics and Electronic Information Engineering, Minjiang University, Fuzhou 350108, China; 2.
Depart of Environ and Equip Engineering, Fujian University of Technology, Fuzhou 350108, China; 3. College of Energy,
Xiamen University, Xiamen 361102, Fujian Province, China)
Abstract: The thick film gas sensors were prepared by using WO3 nano-materials that prepared by the method of
thermal oxidation of tungsten. Under the condition of room temperature and UV excitation, gas sensing characteristic
curves of the prepared pure WO gas sensors to H S gas with different volume fractions were tested. Dependencies between
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