原创力文档- 1、原创力文档（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。。
- 2、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击 这里二次下载。
- 3、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。
查看更多
1
02
Optimization of Interfacial Treatment, Study
of Interfacial Properties and Characterization
of InAs-Based Metal-Oxide-Semiconductor
Capacitors
1 2 3 4 3 5
1 2 3 4
5
(High-k Dielectric)
X (XPS) -
(HfO ) (Al O )
2 2 3
(Calculated
Equivalent Thickness, CET) 3.3 (Frequency Dispersion)
Abstract
In this study, InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) with different
chemical treatments before high-k gate dielectric deposition were fabricated and characterized
in detail through X-ray photoelectron spectroscopy (XPS) analysis and multi-frequency C-V
measurement. Experimental results reveal that InAs MOSCAPs with HfO /Al O bilayer dielectrics
2 2 3
using HCl and HF treatments demonstrated a low calculated equivalent thickness (CET) value of
3.3 nm with an acceptable gate leakage current level, and suppressed frequency dispersion as
well as lower stretch-out in the C-V measurements.
Keywords
High Mobility Materials III-V MOSCAPs InAs MOSCAPs
NANO COM
文档评论（0）