解决90nm及以下铝蚀刻中金属腐蚀的先进工艺-集成电路工程专业论文.docxVIP

II II THE ADVANCE PROCESS OF SOLVING ALUMINUM CORROSION IN 90NM AND LESS THAN 90NM ALUMINUM ETCH ABSTRACT With the development of semi-conductor technology, the technology of semi-conductor manufacture had entered into 45nm generation form 90nm generation. And the 32nm generation has started to research and apply. Aluminum line has been applied from the earliest semi-conductor. The application of Copper line is less than 8 years. With the increase of Copper line application, the application of Aluminum has been decreasing. But Aluminum interconnect has existed for a long time, to match the method of Bonding technology. The Aluminum ETCH is absolutely necessary. One of the most important defects is Aluminum corrosion. The topic researches into the problem that the Aluminum corrosion in 90nm and less than 90nm Aluminum ETCH. Improvement of Dry ETCH process as the main means, and the improvement of the whole Aluminum ETCH flow as accessorial means. We want to get effective solution of Aluminum corrosion defect. KEY WORDS: Aluminum, Corrosion defect, ETCH, 90nm III III 目 录 第一章 引言 ················································································································· 1 1.1 铝金属蚀刻概述································································································· 1 1.2 铝金属腐蚀现状分析························································································· 2 1.3 课题研究目标和方向························································································· 6 1.4 课题实施方案····································································································· 7 第二章 90NM 存储类产品铝金属蚀刻腐蚀解决方案·················································· 8 2.1 无甲烷（CH4）/甲烷（CH4）铝金属蚀刻工艺实验······································ 9 2.2 增加甲烷（CH4）流量的铝金属蚀刻工艺实验 11 2.3 改善化学清洗方式的工艺实验 ······································································· 13 2.4 本章小结 ··················································