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上海交通大学硕士学位论文
上海交通大学硕士学位论文
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万方数据
DTSSERTATTON TEMPLATE FOR MASTER DEGREE OF ENGTNEERTNG TN SHANGHAT JTAO TONG UNTVERSTTY
ABSTRACT
In the manufacturing progress of IC, lithographic process is a very important part. As the prediction of Moores law, the size of device becomes smaller and smaller. Meanwhile, scanner as the pattern printing tool grows more and more precise with the development of modern technology. Immersion era of lithographic has come, we use pure water instead of traditional air, with the help of water refraction property, we can push our process to 65nm and even smaller.
New immersion process gives a possibility of aggressive patterning; it also brings us some strange defect types which are different from dry process. These new defect types are called water mark, bubble, micro bridge, etc. in this paper, I studied the defect generation principle. Air bubbles are caused by hardware movement and those chemicals we use for immersion process. Water mark defect is generated by remaining water droplet on wafer surface, which decreases resist sensitivity and makes resist under exposure. Under exposure patterns, then, becomes
water mark defects. Micro bridges are also a kind of under exposure pattern, but, its caused by micro bubble or particle, or the resist leaching into top coating instead of losing resist sensitivity.
all the above are the main reasons for defectivity in immersion lithographic process. I introduce some optimized method to improve process defect, such as choosing better top coating material, optimizing scanning loop, decreasing particle quantity from its source, optimizing rinse process and regular machine maintenance, etc. Through my study, I
-1-
figure out the best common method for all the different resist, with the
help of which the fewest defects could be generated. Finally, for each certain resist, I individually fine tune parameters for them, so as to meet the critical requirement of modern lithographic immersion proc
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