局域铂掺杂功率快恢复二极管的研究-微电子学与固体电子学专业论文.docxVIP

北京工业大学工科硕士毕业论文Abstract 北京工业大学工科硕士毕业论文 Abstract The research field iS high POwer semiconductor switches．and the target iS high power fast recovery diode(FRD)that is the key component of power electronic circuits．It requires fast recovery speed，soft softness factor，lOW leakage current．and low forward voltage drop．But until now,any technology including traditional in—diffusion of transition metals，such as platinum and gold。electronic irradiation，and li曲t ions irradiation cannot solve the trade．Ofr problem of the device’s electronic characteristics．nle newly developing technology—local lifetime control technology uses alpha and proton irradiation Can induce a hi时l density defects which Can create a low lifetime region as recombination center．While．this technology limits nle ireprove of switching speed and softness of power devices because of causing high reverse leakage current．As we all known，platinum has a good energy level in silicon as a recombination centeg which makes devices a 10w leakage current compare to other lifetime control technologies．Furthermore．the defects induced by proton ions irradiation Can be gettedng sites that Can create an agglomeration of platinum in a well．defined region of power devices．According to this，we bring forward a hovel technology,which is proximity geRering of platinum with local lifetime control， which avoids the disadvantages of lOCal lifetime control by light ions and uniforrn lifetime control by transition metals and high—energy electron irradiation．We find the novel technology Can be used in 10Cal lifetime control with experiment because of the eriects on ft，rward and reverse character of power diodes．We get the condition of good gettering efficiency including the dose of ions，annealing temperature，and annealing time and SO on．Unfortunately,as for reverse recovery time．this novelidea it still needs further study not only on the theory but also thought the experiment because of low platinum density after gettering． The hovel ide