L6392DTR;L6392D;中文规格书,Datasheet资料.pdf

L6392 High-voltage high and low side driver Features ■ High voltage rail up to 600 V ■ dV/dt immunity ± 50 V/nsec in full temperature range ■ Driver current capability: SO-14 DIP-14 – 290 mA source – 430 mA sink ■ Switching times 75/35 nsec rise/fall with 1 nF load Description ■ 3.3 V, 5 V TTL/CMOS inputs with hysteresis The L6392 is a high-voltage device manufactured ■ Integrated bootstrap diode with the BCD “OFF-LINE” technology. It is a single chip half-bridge gate driver for N-channel Power ■ Operational amplifier for advanced current MOSFET or IGBT. sensing The high side (floating) section is designed to ■ Adjustable dead-time stand a voltage rail up to 600 V. The logic inputs ■ Interlocking function are CMOS/TTL compatible down to 3.3 V for easy ■ Compact and simplified layout interfacing microcontroller/DSP ■ Bill of material reduction The IC embeds an operational amplifier suitable ■ Flexible, easy and fast design for advanced current sensing in applications such as field oriented motor control. Applications