IC工艺技术2--光刻.pptVIP

IC工艺技术系列讲座第二讲 PHOTOLITHOGRAPHY 光刻 讲座提要 1. General 2. Facility (动力环境) 3. Mask (掩膜版) 4. Process step highlight (光刻工艺概述) 5. BCD 正胶工艺 6. History and 未来的光刻工艺 1. General MASKING Process (光刻工艺) Photolithography (光学光刻) ----Transfer a temporary pattern (resist) Defect control Critical dimension control Alignment accuracy Cross section profile Etch (腐蚀) ----Transfer a permanent pattern (Oxide, Nitride, Metal…) 2.0 Facility requirement Temperature (温度) 70 oF Humidity (湿度) 45% Positive pressure (正压) 0.02in/H2O Particle control (微粒) Class 100 Vibration (震动) Yellow light environment (黄光区)