题目碳化矽粒子须晶及碳纤维强化铜银基电接触材料制程及性质之.doc

PAGE PAGE 4 教育部學術追求卓越計畫期中成果報告 鐵電多層薄膜之結構及電性研究 Studies on microstructure and electrical properties of ferroelectric multilayered thin films 執行期限：94年4 主持人：吳泰伯 教授 清華大學材料工程學系 共同主持人：林樹均 教授 清華大學材料工程學系 計畫參與人員：賴加瀚 鐘賢文 清華大學材料工程學系 I. ABSTRCT In this study, multilayered thin films constructed by ferroelectric Pb(Zr0.4Ti0.6)O3 and anti-ferroelectric PbZrO3 have been processed by dual-gun rf magnetron sputtering to a fixed total thickness of 240 nm, and the effects of layer thickness on microstructure and electrical properties studied. All multilayered thin films exhibited well crystallinity without any pyrochlore phase. The dielectric constant of multilayered films increased as decreasing the layer thickness and dielectric loss was low. The hysteresis loop of multilayered films changed from antiferroelectric double loop to ferroelectric single loop. The multilayered films exhibited much improved fatigue properties attributed to the insertion of antiferroelectric phase. Keywords: dual-gun rf magnetron sputtering, ferroelectric, antiferroelectric, multilayered, fatigue 中文摘要 本研究中，利用雙靶射頻磁控濺鍍法可置備出鐵電PZT(40/60)/反鐵電PZO多層薄膜，同時控制各單層厚度並固定總薄膜厚度為240 nm，研究其展現的結構與電性質。經過退火650 °C、10分鐘下，多層膜具有良好結晶性、沒有pyrochlore相殘留的結構。電性方面，多層膜結構具有高介電常數且介電損失低。隨著單層厚度的降低，可以觀察到多層結構從反鐵電特性逐漸轉變成鐵電特性。多層膜表現出優良的抗疲 關鍵詞：雙槍射頻磁控濺鍍、鐵電、反鐵電、多層膜、疲勞 II. INTRODUCTION Ferroelectric thin films have attracted considerable attention for potential applications in numerous devices such as microactuators, nonvolatile ferroelectric random access memories (NVFRAMs)[1], due to their excellent dielectric and ferroelectric properties. Pb-based ferroelectric materials such as PbTiO3, PbZrO3, Pb(Zr,Ti)O3 are perovskite structure, and they have large value of remanent polarization, dielectric constant. Pb(Zr,Ti)O3 (PZT) films have the practical importance of low operating voltage and leakage current, and their dielectric permittivity can be largely increased by adjusting the Zr/Ti ratio near a rhombohedral-tetragonal morphotropic phase bound