硅基薄膜及太阳电池制备研究-物理学 凝聚态物理专业论文.docxVIP

兰州大学博士学位论文Abstract 兰州大学博士学位论文 Abstract At present，in the industrial production，Si solar cells are undergoing the change from Generation I(crystalline Si)solar cells to Generation II(thin film)solar cells．In the laboratory,researchers have started to investigate Generation III(1arge efficiency) solar cell，the tandom solar cell becomes the focus due to its simple process of preparation．Microcrystalline Silicon Germanium thin film is widely applied in the tandom solar cell as middle or bottom material beeause of better optical stability， larger mobility，narrower and varied band gap． In this thesis，laC-Si：H and pc-SiGe：H films were prepared by PECVD at low temperature(250。C)using H2 and Ar as diluted gases．The growth mechanism, microstructure and optoelectronic properties of microcrystalline silicon germanium thin films are analysised．Meanwhile，a-Si solar cells were fabricated using Si3Hs as the source gas，the performance of the solar cell was characteristed and analysised． The outline of the thesis iS shown as follows： The gc—Si：H films were prepared by PECVD at low temperature，the results reveal that the addition of Ar in the diluted gases can efficiently improve the deposition rate and crystallinity．H2 and Ar all play a positive role in the formation of gc—Si：H films： H2 promotes the mobility of the precursor and saturates the dangling bonds；Ar not only increases the dissociation efficiency of source gas，but also annealing the growth surface by bombardment of Ar’to surface，in which released energy results in the increase in crystallinity． The gc—SiGe：H films were prepared and the influence of H2 and Ar flow rate on the structure and optoelectronic properties Was investigated．The film crystallinity of p．c-SiGe：H films increased with the increasing Ar flow rate．Film density and optoelectronic properties improved with increased H2 flow rate． The a-Si solar cell was fabricated by PECVD using Si3Hs，a new gas，as source gas． The efficiency of a-Si solar cell with Si3Hs as