脉冲等离子体刻蚀工艺中极板上离子能量和角度分布的研究-等离子体物理专业论文.docxVIP

脉冲等离子体刻蚀工艺中极板上离子能量和角度分布的研究关键词：等离子体刻蚀：多尺度模拟；脉冲调制等离子体：离子能量和角度分布 脉冲等离子体刻蚀工艺中极板上离子能量和角度分布的研究 关键词：等离子体刻蚀：多尺度模拟；脉冲调制等离子体：离子能量和角度分布 万方数据 study study on Ion Energy and Angular Distribution on Electrodes during Pulsed Plasma Etching Processes Abstract Semiconductor integrated circuit is the highlight of the micro／nano manufacturing field， with the s}lrinking feature scale，processing is facing great challenge．PIasma etching technology as an irreplaceable tool has been widely used instead 0f traditional wet etching wnlch has the adV粕tages of high etching rates，high selectivity and high anisotropy，it·s also a keY method to transfer the lithography graphics from photoresist mask to sub§trate．For exampJe，胁∞carb∞plasma is used to etch Si02，while chlorine plaSma is usedto etch Si． rhe most蛐portant ming is to make sure the etching uniform，aniso仃0pjc and 10w radiation damage more than improving etching rates．Moreover argon is padded t0 enhance t}le ion bombardment,howeVer ion energy and angular distribution(1ED and tAD)are the key factors to dlmctIy affe吼the etching results，the effects of ion density on etching selectiVity，charge accumulation and the influences of IEAD on surface reaction make knowing the etching mechanlsm hard，‘o accurately modulate ion density，IED and lAD during plaima etching processes is vital issue to be reckoned with． In this masteral dissertation，one model coupled reactor model and sheath model was estabJjshed·The numerical method was employed to simulate the planar-type inductivelv coupled plasma(ICP)discharge processes．Under the conditions of different pulSedbias waVe内nlls and discharge parameters，researches and analysis will be done about IED and lAD踟Vmg at the underlying substrates．The ions and neutral particles density distributions are obtajned uslng commercial software named CFD-ACE+co玎esponding to differcnt reactlon coefficients．The ion density at sheath boundary is used the sheath boundarV condltlon 1n sheath mo．del to get the lED and lAD．The shea