阶段平衡降温法硅的研究.docVIP

doi：10.3969/j.issn.1007-7545.2013 doi：10.3969/j.issn.1007-7545.2013.04.007 吴东旭1，阎峰云1,2，王硕2，邵敬涛2，樊志斌2 （1.兰州理工大学 有色金属合金及加工教育部重点实验室，兰州 730050；2.兰州理工大学 甘肃省有色金属新材料省部共建国家重点实验室，兰州 730050） 摘要：研究阶段降温法提取硅的最佳工艺条件，考察合金在凝固过程中的保温温度、保温间隔时间、降温幅度及搅拌速度对初生硅生长及分布规律的影响，并比较不同终止温度和搅拌情况下的提取率。结果表明，当保温温度为900 ℃，降温幅度为10 ℃，保温间隔时间为20 min时，硅的平均直径达到0.466 mm，粒径大于3.35 mm所占比例达到20.2%；当搅拌速度为50 r/min，终止温度为640 ℃时 关键词：高硅铝合金；平衡降温法；初生硅；提取 中图分类号：TF111 文献标志码：A 文章编号：1007-7545（2013）04-0000-00 Study on Silicon Extraction with Balanced Cooling Method WU Dong-xu1, YAN Feng-yun1,2, WANG Shuo2, SHAO Jing-tao2, FAN Zhi-bin2 （1.State Key Laboratory of Gansu Advanced Non-ferrous Metal Materials, Lanzhou University of Technology, Lanzhou 730050, China；2. Key Laboratory of Non-ferrous Metal Alloys and Processing of Ministry of Education, Lanzhou University of Technology, Lanzhou 730050, China） Abstract: The optimum conditions for silicon extraction with balanced cooling method were studied. In solidification process, the effects of holding temperature, holding time interval, cooling range and stirring speed on the growth and distribution law of primary silicon were investigated. The extraction rates under different terminal temperature and in different stirring situations were compared. The results show that the average diameter of silicon particle is 0.466 mm, the proportion of particle size 3.35 mm reaches 20.2% under the conditions including holding temperature of 900 ℃, cooling range of 10 ℃ and holding time interval of 20 min. Meanwhile, the extraction rate of silicon is up to 44.3% when stirring speed is 50 r/min Key words: high-silicon aluminum alloy; balanced cooling method; primary silicon; extraction 经过进一步提纯的硅是发展太阳能产业和信息微电子产业的重要原材料。目前主要采用电热还原法[1-3]制得冶金级硅，经精制后可得到纯度98%~99%的精制冶金硅。但该方法对原材料SiO2的纯度要求较高（SiO2≥98.5%)。目前我国纯硅石资源越来越少[4]，因此需要考虑从其他途径获取金属硅。 我国非铝土矿，如红柱石、蓝晶石等储量丰富，可通过电热还原法直接还原出铝硅合金，其中硅含量高达40%~60%[5]。利用报废的集成电路和太阳能基板，与废铝熔炼后也可得到高硅含量的铝硅合金。本文将铝液作为清洗剂，将过共晶合金中的初生硅从液相中直接提取出来，获得品质较高的金属硅，剩余金属液再制备铝硅合金。从铝硅合金中提取硅的方法主要有离心法和