高功率脉冲磁控溅射crn、alcrn这和alcrsin涂层的制备研究.docx

高功率脉冲磁控溅射crn、alcrn这和alcrsin涂层的制备研究.docx

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高功率脉冲磁控溅射crn、alcrn这和alcrsin涂层的制备研究

形能力和抗塑性变形能力也最差;涂层的内应力也有同样的规律体现,并且表现的 形能力和抗塑性变形能力也最差;涂层的内应力也有同样的规律体现,并且表现的 都是压应力。不同频率的AICrSiN一样都是压应力,随着频率的增大,应力先升高 后再逐步降低;与不同偏压时的AICrSiN不同,涂层的硬度没有随着频率规律变化。 在结合力方面的表现非常差。 关键词:高功率脉冲磁控溅射;CrN;AICrN;AICrSiN;偏压;频率 II 万方数据 ABSlRACTABSTRACT ABSlRACT ABSTRACT PVD hard coatings have been widely used to improve the properties of cutting tools. Generally,there are two means available for the preparation PVD hard coatings,namely, magnetron sputtering(MS)and ion plating(AIP).AIP acquire high ionization rate plasma source which contribute to the hardness and adhesion of the coatings. However,the micro-droplets due to the process causes the high surface roughness, resulting in high friction coefficient and wear rate.MS,espcially direct current MS (DCMS)can acquire the coatings with smooth surface,but the coating hardness and adhesion are not high due to low ionization rate.High Power Impulse Magnetron Sputtering(HIPIMS)can significantly increase the ionization rate and energy of the species for the growth coatings as compared to DCMS.In addition,the micro·droplets absent during the deposition process.Accordingly,HIPIMS has been respected to be of the best techniques to prepare hard coatings. In this paper,CrN,AICrN and AICrSiN coatings were deposited by HIPIMS with different substrate bias voltages and frequencies.The composition,structure,mechanical properties of the coatings were studied using Energy Disperse Spectroscopy,Scanning Electronic Microscopy,X·Ray diffraction,nanoindentation and SO on.The main conclusions are as follows. (1)CrN coatings:as the substrate bias voltage increased,the width of columnar crystal decreased.When the bias voltage reached to-200V,there was no obvious columnar crystal and the coating surface presented a crater-like feature.At relatively low bias volage G-1 00 V),the diffraction peak of CrN(200)was very strong.However,when the bias voltage increased(-1 50 V and一200 V).The main diffraction peak became wide. As the substrate bias voltages increased,t

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