IC工艺技术2- PHOTOLITHOGRAPHY光刻.ppt

SVG 8800 SVG 90 5.4.2 Resist develop Equipment Develop sink Equipment set up Temperature N2 blanket Filter size Filter change Developer TMAH 2.38% Develop change Process step batch develop --- immerse (1’ 15”) QDR DI water rinse (8 cycles) hard bake (110-130oC)/cold/palte 6. History and 未来的光刻工艺 Will imprint technology replace photolithography? In 1798, image was transferred by stone plate 1940, Bell Lab used resist developed by Eastman Kodak 1960, San Francisco bay area becomes the silicon valley --- AT T, Raytheon, Fairchild, Negative resist – contact print process wildly was used. End of 1970-early of 1980, positive resist – Projection print (Perkin Elmer Micalign) started to be used in production. Bay area became cloudy --- National, Intel and AMD. Outside bay area had Motolora, TI, IBM. From 1970 to early 2000, the technology of semiconductor is developed very fast. The smallest feature size from 10u reduced to 0.09u. 0.25u and 0.35u products were running mass production every where ---USA, Europe, Japan, Taiwan, Korea… i-line,and deepUV --- 5X stepper and step-scan (4X) aligner became the major tools. Now, 0.09u technology become mature. 0.065u, 0.045u and 0.035u technology are being developed. Immersion lithography and imprint technology will be used to print these nano feature. Imprint technology claims that it is able to print 0.01u (10nm) --- It may be the future masking. 6.1 History Lithography, as used in the manufacture of the integrated circuit, is the process of transferring geometric shapes on a mask to the surface of a silicon wafer. These shapes make up the parts of the circuit, such as gate electrodes, contact windows, metal interconnections, and so on. Although most lithography techniques used today were developed in the past 40 years, the process was actually invented in 1798; in this first process, the pattern, or image, was transferred from a stone plate (the word litho comes from).