AlN薄膜择优取向生长机理及制备工艺.pdfVIP

34 6 Vo.l 34 N o. 6 2005 12 JOURNAL OF SYNTHET IC CRY STAL S Decem b e, 2005 AlN , , ( , 4 10082) : A Nl , / 0 / 0 , A Nl , , , , , AlN , ( 100) A Nl , ( 002) : A Nl ; ; : O484 : A : ( 2005) 0621146208 Grow th M echan ism and SynthesizingM ethods of PreferentialOr ientation ofA lN Th in F iml s MEN Ha i2quan, ZHOU Ling2ping,XIAOHan2ning ( College ofM ate ials Science and Engin ee ing, H unan Un ive sity, Changsha 4 10082, Ch ina) (Received 22 April 2005) Abstr act: A Nl th in fiml s w ith diffe ent p efe ent ial o ientat ions have dissmi ila physical and chem ica l p ope ties and the unde lying m echanism s that detem ine the p efe ential o ientation s of A Nl thin fiml s conta in / ene gy m in mi ization0 of themodynam ics and / evolut iona y selection0 of k inetics. A Nl th in fiml s w ith d iffe en t p efe ential o ientat ions can be fab icated by optmi izing deposit ion cond ition s among m any synthesizing m ethods. The effects of facto s on the p efe entia l o ientation m ay be cont ibuted to the ene gy diffe ences of the depositing pa ticles b efo e the i each ing the sub st ate, wh ich induces the comp etit ion of g owth ate b etween diffe ent planes. The investigative esults ind icate that the p efe ent ia l o ientat ion plane is a p lane w ith the h ighest g owth ate at the deposition condition s. And among all the cont o