基本原理--电路元件2-1.pptVIP

基本原理---元器件模型 小结 元器件寄生元素 影响信号增益 降低电源旁路的有效性 高频时改变器件的性能 板的寄生元素 改变电路响应 电路之间耦合干扰 高速电子系统的阻抗 阶跃响应 阻抗效应 * 无源器件具有一些隐含的功能特性。数字逻辑电平在高低电平之间转换，根据傅立叶变换的理论，此时交流频率变换项并存。由于寄生现象，会产生各种影响。这些影响与频率有关，并随着频率的增高而变得更加严重。 和数字器件一起使用时，绝不要认为电阻器就是电阻，电感器就是电感，电容器就是电容 * 1 oz Cu (copper) is defined to be a layer with 1 oz of Cu per square foot. Also, t ? 1.37 mil/oz, Cu ? ? 0.68 (??-in) These numbers are the basis for the R? (ohms per square) value shown in the slide. Given: 1 oz Cu (1 ounce copper) w = 50 mils (0.050 in) x = 1 in We estimate: R? ? 0.50 mW/? x/w = number of “squares” = 20 R ? 10 mW Note: 2 oz copper would give 0.25 m?/? * See the next slide for specific examples of GF. * 电容的频率特性 实际电容的简化模型是一个RLC串联网络，故该电路具有谐振阻抗和谐振频率 在频率较低时，模型呈容性，阻抗随频率的增加而降低，并在谐振点达到最低。由于寄生电感的作用，谐振点后，阻抗随着频率的升高而增加而，呈现电感的阻抗特性。对高频噪声的旁路作用减弱，甚至消失 对于较大值的电容（大于10uF），一般封装较小的比封装较大的具有更大的寄生电感和电阻 * Kemet has a free “SPICE simulator” that produces these models for their capacitors. Tantalums are good for high frequency bypassing. Electrolytic capacitors are somewhat different, and do not bypass high frequency energy as well. * Use the equations on the previous slide for “narrow traces” (w h). Note that “narrow traces” can also be considered to be far apart. * * M is the mutual inductance between the traces. Given: w = 50 mils h = 10 mils We estimate: M ? L ? 8 nH/in (5 W reactive at f = 100 MHz and x = 1 in) Given: ys = 1 in t = 1.4 mils We estimate: M ? L ? 80 nH/in (50 W reactive at f = 100 MHz and x = 1 in) * Given: w = 50 mils h = 10 mils t = 1.4 mils We estimate: L ? 4 nH/in (3 W reactive at f = 100 MHz and x = 1 in) M ? 0.3 nH/in (0.2 W reactive at f = 100 MHz and x = 1 in), ys = 100 mils M ? 0.004 nH/in (0.002 W reactive at f = 100 MHz and x = 1 in), ys = 1 in * Technically speaking, the equations above are simplified for linear magnetic response; this is a reasonable approximation when non-magnetic materi