微波辅助化学气相沉积法合成硅纳米线课件.ppt

Silicon Nanowires Synthesized via Microwave-Assisted Chemical  Vapor Deposition 组员：蒋振龙 王美玲 孙建会 孙瑞瑞 董思宁 殷月伟 主要内容 Introduction Experiment Experimental Results Discussion Application of SiNWs Introduction of silicon nanowires Silicon nanowires have unique electronic and optical properties, it can be wildly used in sensor and electronic industries. The synthesis of silicon nanowires are high-cost or high-energy conditions. 合成硅纳米线的几种方法 激光烧蚀：海绵状的SiNWs 水热法：（20 nm） 分子束取向附生法(MBE） 金属催化化学腐蚀方法（单晶性好、轴向可控） AAO模板法 热物理蒸发法 A new method to synthesis silicon nanowires This is not a new method. Microwave sources have previously been employed in the synthesis of carbon nanotubes. However, to the best of our knowledge, application of a microwave field has not been reported on the growth of SiNWs at ambient conditions prior to this work. Experiment condition An unmodified 1100??W, 2.45??GHz Emerson domestic microwave oven Trichlorosilane (99%) from Aldrich Substrate materials: （i）1×4??cm ITO-coated slides from Hartford Glass Co. (surface resistivity≈15Ω/□ ) that were thinned down to 1??mm thickness by mechanical polishing (substrate A). （ii）1?mm thick ITO-coated glass slides from Aldrich (surface resistivity≈15Ω/□ ) that were cut into rectangles of 1×4??cm (substrate B). The difference of two substrates Substrate A: Substrate B: Experiment Results (SEM) Results (SEM) Results (SEM) Results (EDS analysis) Results (XPS analysis) Conclusions SEM analysis of the unmodified substrate A showed a predominantly columnar orientation of its conductive layer, whereas substrate Bs conductive layer was found to be made up of compact microspheres. Substrates of different ITO microstructure were found to result in Si wires of different morphologies. Chemical analysis showed the structures obtained to be of high purity silicon, comparable to conventional SiNW growth techniques currently in use. Discussion Advantages: