半导体物理_载流子热运动.pptVIP

Chapter 2 Motion and Recombination of Electrons and holes 2.1 Thermal motion Average electron or hole kinetic energy ==kT=mva2 3kT3×1.38×1023JK1×300K 0.26×9.1×10°kg =23×105m/s=2.3×107cm/s Modern Semiconductor Devices for Integrated Circuits(C. Hu) Slide 2 2.I Thermal motion Zig-zag motion is due to collisions or scattering with imperfections in the crystal Net thermal velocity is zero Mean time between collisions is tm0 lps Modern Semiconductor Devices for Integrated Circuits(C. Hu) Slide 2-2 Hot-point Probe can determine sample doing type Hot-point Probe Hot Cold Hot Cold distinguishes n and ptype P semiconductors Thermoelectric generator (from heat to electricity and Cooler (from Coldcold Colds electricity to refrigeration) miconductor Devices for Integrated Circuits(C. Hu) Slide 2-3 2.2 Drift 2.2.1 Electron and hole mobilities Drift is the motion caused by an electric Modern Semiconductor Devices for Integrated Circuits(C. Hu) Slide 2-4 2. 2.1 Electron and hole mobilities m,V=qETmp qETmp E an n u, is the hole mobility and u, is the electron mobility lodern Semiconductor Devices for Integrated Circuits(C. Hu) Slide 2-5 2.2.1 Electron and hole mobilities FuE, u has the dimensions of v/E cm Electron and hole mobilities of selected semiconductors Si Ge GaAs InAs n(cmVs)|14003900850030000 up(cm/V-s) 470 1900400 500 Based on the above table alone, which semiconductor and which carriers (electrons or holes) are attractive for applications in high-speed devices? Modern semiconductor devices for Intes Slide 2-6 Drift Velocity, Mean Free Time, Mean Free Path EXAMPLE: Given u,=470 cm2/Vs, what is the hole drift velocity at E=03 V/cm? What is t and what is the distance traveled between collisions (called the mean free path)? Hint: When in doubt, use the MKS system of units Solution:v=le= 470 cm/Vsx 10 V/cm= 4.7x 10 cm/s m=1m/q=470cm2/Vs×0.39×91×103kg/1.6×10C =0.047m2NVs×2.2×1012kg/C=1×1013s=0.1ps mean free path=tnn~1×1013s×2.2×107cm/s =2.2×106cm=220A=22nm This is smal