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Challenges and Solutions of PI Signoff for Next Generation
Large Scale Chips with TSMC 7nm Process Technology
Junjie Chen, Keqing Ouyang
ZTE SANECHIPS
2019/10/29
CONTENTS
• General Overview of Sanechips
• Backgrounds and Motivations
• Solutions of New Technology Challenges
• Summary
General Overview of Sanechips
• 20+ years in IC developments Re-organized as an independent legal entity in 2003
• Leading Chip provider in industry with 1800+ employees in 8 RD centers
• Advanced physical design capability with cutting-edge process technology
• 100+ chips in mass production, with board portfolio covering cloud, pipeline and terminals
• 3500+ patents owned including 1700+ international patents
© ZTE All rights reserved
3
Backgrounds and Motivations
• Design challenges on IREM
✓ Evolution process technology
➢ Decreasing supply voltage
➢ Demanding PVT corner coverage due to reduced PI noise margin
➢Significant self-heating effect
✓ Increasing design scale and complexity
➢Single machine needs larger memory
➢ Legacy multi-threads solution cannot meet PI simulation
requirements
➢ More functional scenes need to be simulated
➢Vector-based PI simulation becomes more and more difficult
6X Increase in grid
• Challenges in IREM signoff
complexity, compared to Ultra low voltage computing
✓ Resistance,nodes and local power density are increasing 16nm. Power grids have means margins are razor thin,
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