发光学 半导体发光和光谱技术分析.pptVIP

期中复习 引言 发光定义: 发光是物质(的)辐射中超出热辐射并具 有相当于激发态寿命的延续时间的部分。 Valadon onry. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 发光和黑体辐射的区别 1、发光是非平衡过程,其辐射能量与电子能级 有关;黑体辐射是平衡辐射,其辐射能量与温 度有关。 2、黑体辐射是一个宽谱带发射,而发光较窄。 3、黑体辐射是热光源发射,发光是冷光源发射。 4、黑体辐射的峰值波长由辐射体的温度决定的; 发光是由跃迁对应能级决定。 Valadon onry. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 线性光谱技术 1、透射光谱 T(λ)与λ的关系 波长/mm Evaluator oni ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 2、吸收光谱 吸光度消光度光密度 A()- 8 3.25 Evaluadon only. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 3、反射光谱 R(A)-2 Evaluadon only. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 4、调制反射光谱 30上 △RR--E或入 -IDF a.798ev 光子能量V 图3.35场效应结构情况下锗的电反射谐有““符号的 图3.340-6V光子能量范围内Ge/As 信号为图示比例的10管 的三种反射光谱的比较上图:静态反射 谱中图:能量傲商反射评,T=2K 下图:场电调制反射谱,T=10K Evaluadon only. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 5、一般发光光谱(PL谱) 定义:I()~ E(MMI 600 Wavelength(nm) Evaluadon only. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 6、选择激发发光光谱(4的特例) 定义:I()-A激发波长 Evaluadon only. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 7.激发光谱 定义:I(0)-20间测波长 1100FC UUU C 0360404048 Wavelength. ni 图6Y30Al3O2:Ce荧光粉的激发光谱 Evaluadon only. ch Asposeslides for NET 4o dient P Evaluation only. Created with Aspose Slides for NET 4.0 dient Profilo 71 Copyright 2004-2017Aspose Pty L 8、发光衰减 a.定义:I