AKZE5N50广东奥科半导体.pdf免费

AKZE5N50 N-Channel 500-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement RDS(on) () VGS = 10 V 1.2 • Enhanced 30 V, VGS Rating Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC D TO-252 G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V