场效应MOS管AK40P05Y参数-5.3A-40V封装SOT-23-3L.pdf免费

AK40P05Y AK P-Channel Enhancement Mode Power MOSFET Description The AK40P05Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It D can be used in a wide variety of applications. G General Features ● V =-40V,I =-5.3A DS D S RDS(ON) 85mΩ @ VGS=-10V Schematic diagram RDS(ON) 125mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 40P05Y AK40P05Y SOT23-3L Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -5.3 A Drain Current-Continuous(T =100℃) I (100