场效应MOS管AK1608N参数8A16V封装SOT-23-6L.pdf免费

AK1608N AK N-Channel Enhancement Mode Power MOSFET Description The AK1608N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features ● V = 16V,I =8A DS D RDS(ON) 16mΩ @ VGS=2.5V RDS(ON) 12mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery protection ● Load switch ● Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 1608N AK1608N SOT23-6L Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 8 A Drain Current-Pulsed (Note 1) IDM 30 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ ,TSTG -55 To 150